Si4542DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.025 at V = 10 V 6.9 GS TrenchFET Power MOSFET N-Channel 30 0.035 at V = 4.5 V 5.8 GS 100 % R Tested g 0.032 at V = - 10 V - 6.1 GS Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.045 at V = - 4.5 V - 5.1 GS D S 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 G 2 S D 2 3 6 2 G 1 G D 4 5 2 2 Top View S D 1 2 Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-Channel P-ChannelUnit V Drain-Source Voltage 30 - 30 DS V Gate-Source Voltage V 20 20 GS T = 25 C 6.9 - 6.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.5 - 4.9 A A I Pulsed Drain Current 40 - 40 DM a I 1.7 - 1.7 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 A a P W Maximum Power Dissipation D T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit a R 62.5 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 70666 www.vishay.com S09-0868-Rev. G, 18-May-09 1Si4542DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 1.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.0 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch 100 V = 30 V, V = 0 V N-Ch 1 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C N-Ch 25 DS GS J V = - 30 V, V = 0 V, T = 55 C P-Ch - 25 DS GS J V 5 V, V = 10 V N-Ch 20 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 6.9 A N-Ch 0.020 0.025 GS D V = - 10 V, I = - 6.1 A P-Ch 0.026 0.032 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5.8 A N-Ch 0.026 0.035 GS D V = - 4.5 V, I = - 5.1 A P-Ch 0.036 0.045 GS D V = 15 V, I = 6.9 A N-Ch 25 DS D a g S Forward Transconductance fs V = - 15 V, I = - 6.1 A P-Ch 16 DS D I = 1.7 A, V = 0 V N-Ch 1.2 S GS a V V Diode Forward Voltage SD I = - 1.7 A, V = 0 V P-Ch - 1.2 S GS b Dynamic N-Ch 30 50 Q Total Gate Charge g N-Channel P-Ch 32 50 V = 15 V, V = 10 V, I = 6.9 A DS GS D N-Ch 7.5 Q Gate-Source Charge nC gs P-Ch 7.0 P-Channel N-Ch 3.5 V = - 15 V, V = - 10 V, I = - 6.1 A DS GS D Q Gate-Drain Charge gd P-Ch 5.0 N-Ch 0.5 2 3.4 R Gate Resistance g P-Ch 2 4 6.8 N-Ch 12 20 t Turn-On Delay Time d(on) N-Channel P-Ch 10 20 V = 15 V, R = 10 DD L N-Ch 10 20 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN g P-Ch 10 20 N-Ch 60 90 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 55 80 V = - 15 V, R = 10 DD L N-Ch 15 30 I - 1 A, V = - 10 V, R = 6 D GEN g t Fall Time f P-Ch 25 40 I = 1.7 A, dI/dt = 100 A/s N-Ch 50 90 F Source-Drain t rr Reverse Recovery Time I = - 1.7 A, dI/dt = 100 A/s P-Ch 50 90 F I = 1.7 A, dI/dt = 100 A/s N-Ch 45 F Reverse Recovery Time Q nC rr I = - 1.7 A, dI/dt = 100 A/s P-Ch 55 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70666 2 S09-0868-Rev. G, 18-May-09