Si1028X Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g ESD Protected: 550 V Typical HBM 0.650 at V = 10 V 0.48 Material categorization: GS 30 0.5 For definitions of compliance please see 0.770 at V = 4.5 V 0.45 GS www.vishay.com/doc 99912 BENEFITS Low Offset Voltage Low-Voltage Operation High-Speed Circuits Small Board Area APPLICATIONS Load/Signal Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems SC-89 S 1 6D 1 1 Marking Code G XX G 2 5 G 1 2 Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS a, b T = 25 C A 0.48 a I Continuous Drain Current (T = 150 C) D J a, b T = 70 C A A 0.45 I 1 Pulsed Drain Current (t = 300 s) DM a, b Continuous Source-Drain Diode Current T = 25 C I A A S 0.18 a, b T = 25 C 0.22 A a P W Maximum Power Dissipation D a, b T = 70 C A 0.14 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max. Unit t 5 s 470 565 b R C/W Maximum Junction-to-Ambient thJA Steady State 560 675 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. Document Number: 63862 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1956-Rev. B, 13-Aug-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1028X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 12.5V GS(th) DS GS D V = 0 V, V = 20 V 20 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J a I 1A On-State Drain Current D(on) V = 5 V, V = 10 V DS GS V = 10 V, I = 0.5 A 0.540 0.650 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 0.2 A 0.640 0.770 GS D Forward Transconductance g V = 10 V, I = 0.5 A 1S fs DS D b Dynamic Input Capacitance C 16 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 8 pF oss DS GS Reverse Transfer Capacitance C 4 rss V = 15 V, V = 10 V, I = 0.5 A 12 DS GS D Total Gate Charge Q g 0.5 1 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 0.5 A 0.15 gs DS GS D Gate-Drain Charge Q 0.20 gd R Gate Resistance f = 1 MHz 50 g Turn-On Delay Time t 816 d(on) t Rise Time V = 15 V, R = 37.5 10 20 r DD L I 0.38 A, V = 4.5 V, R = 1 Turn-Off Delay Time t D GEN g 918 d(off) t Fall Time 816 f ns Turn-On Delay Time t 24 d(on) Rise Time t 918 V = 15 V, R = 37.5 r DD L I 0.38 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g 714 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics a I 1A Pulse Diode Forward Current SM Body Diode Voltage V I = 0.38 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 918 ns rr Body Diode Reverse Recovery Charge Q 24 nC rr I = 0.38 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 5 a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63862 2 S12-1956-Rev. B, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000