X-On Electronics has gained recognition as a prominent supplier of V23990P688FPM igbt modules across the USA, India, Europe, Australia, and various other global locations. V23990P688FPM igbt modules are a product manufactured by Vincotech. We provide cost-effective solutions for igbt modules, ensuring timely deliveries around the world.

V23990P688FPM Vincotech

V23990P688FPM electronic component of Vincotech
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Part No.V23990P688FPM
Manufacturer: Vincotech
Category:IGBT Modules
Description: V23990P688FPM vincotech igbt modules transistors discrete semiconductors
Datasheet: V23990P688FPM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 88.2143 ea
Line Total: USD 176.43

Availability - 9
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 2
Multiples : 1
2 : USD 88.92

     
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We are delighted to provide the V23990P688FPM from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the V23990P688FPM and other electronic components in the IGBT Modules category and beyond.

V23990-P680-F-PM preliminary datasheet flowPACK 2 3rd gen 1200V/150A Features flow2 housing High power flow2 housing Trench Fieldstop Technology IGBT4 Compact and low inductive design Target Applications Schematic Motor Drive Power Generation UPS ASK MARKETING Types V23990-P680-F Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Inverter Transistor V Collector-emitter break down voltage 1200 V CE T =80C h 134 I T =T max DC collector current C j j A T =80C 150 c 450 Repetitive peak collector current I t limited by T max A Cpulse p j T =80C 313 h Power dissipation per IGBT P T =T max W tot j j T =80C 475 c Gate-emitter peak voltage V 20 V GE t T 150C 10 s SC j Short circuit ratings V V =15V CC GE 800 V T max Maximum Junction Temperature 175 C j Inverter Diode Peak Repetitive Reverse Voltage V T =25C 1200 V RRM j T =80C 110 h DC forward current I T =T max A F j j T =80C c 145 300 I t limited by T max Repetitive peak forward current A FRM p j T =80C 189 h P T =T max Power dissipation per Diode W tot j j T =80C 287 c Maximum Junction Temperature T max 175 C j Thermal Properties T Storage temperature -40+125 C stg Operation temperature under switching condition T -40+(Tjmax - 25) C op Copyright by Vincotech 1 Revision: 1V23990-P680-F-PM preliminary datasheet Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Insulation Properties Insulation voltage V is t=2s DC voltage 4000 V Creepage distance min 12,7 mm Clearance min 12,7 mm Copyright by Vincotech 2 Revision: 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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