CHA2260-QAG United Monolithic Semiconductors

UMSUMSUMSUMSUMSUMS A3688AA3667AA3667AA3667AA3667AA3688A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG CHA2260-QAG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. UMSUMSUMSUMSUMSUMS UMS UMSUMSUMSUMSUMSUMS A2260 It is designed for a wide range of A3667AA3667AA3688AA3667AA3688AA3667A A3688AA3667AA3667AA3688AA3667AA3667A YYWW applications, from military to commercial YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG communication systems. The circuit is manufactured with a pHEMT process, 0.25m gate length. It is supplied in RoHS compliant SMD package. Noise Figure Main Features 3.2 3 Broadband performance: 18-27GHz 2.8 26dB Gain 2.6 2.2dB Noise Figure 2.4 13dBm Pout 2.2 2 23dBm Output IP3 1.8 DC bias: Vd=3.5Volt Id=65mA 1.6 3.0 V 3.5 V 16L-QFN3x3 1.4 1.2 MSL1 20 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Main Electrical Characteristics Tamb.= +25C Symbol Parameter Min Typ Max Unit Freq Frequency range 18.0 27.0 GHz Gain Linear Gain 26 dB NF Noise Figure 2.2 dB Pout Output Power 1dB comp. 13 dBm Ref. : DSCHA2260-QAG3065 - 06 Mar 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 NF (dB) UMSUMSUMSUMSUMSUMS A3688AA3688AA3667AA3667AA3667AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWG UMSUMSUMSUMSUMSUMS A3688AA3667AA3667AA3688AA3667AA3667A YYWWGYYWWGYYWWGYYWWGYYWWGYYWWGCHA2260-QAG 18-27GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25C, Vd = +3.5V Symbol Parameter Min Typ Max Unit Freq Frequency range 18.0 27.0 GHz Gain Linear Gain 26 dB G Gain variation in temperature 0.03 dB/C NF Noise Figure in 18- 20.5GHz 2.6 dB in 21- 27GHz 2.2 RLlin Input Return Loss 10 dB RLout Output Return Loss 15 dB rd OIP3 Output 3 order intercept point in 21- 23 dBm 27GHz Pout Output Power 1dB comp. in 21-27GHz 13 dBm Id Drain current 65 mA These values are representative of onboard measurements as defined on the drawing in paragraphEvaluation mother boar. (1) Absolute Maximum Ratings Tamb.= +25C Symbol Parameter Values Unit Vd Drain bias voltage 4V V Id Drain bias current 85 mA Pin Maximum input power 6 dBm Tj Junction temperature 175 C Ta Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Typical Bias Conditions Tamb.= +25C o Symbol Pad N Parameter Values Unit Vd 14 Drain bias voltage 3.5 V Id 14 Drain current 65 mA Ref. : DSCHA2260-QAG3065 - 06 Mar 13 2/14 Specifications subject to change without notice Bt. Charmille - Parc SILIC - 10, Avenue du Qubec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34