OPB710F

F-Package Choice of phototransistor or photodarlington output Unfocused for sensing diuff se surface Mounted on standard TO-72 header Available in clear encapsulating epoxy (OPB710, OPB730) Filtered to reduce the eeff ct of visible or fluorescent light (OPB710F, OPB730F) OPB710 and OPB710F consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730 and OPB730F consist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington. On each sensor, the emitting diode and detector are mounted side -by-side on parallel axes in a standard TO-72 header. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F and OPB730F (F versions) have a filtering material added to the epoxy to reduce the eeff ct of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Part LED Peak Reflection Non-contact reflective object sensor Number Wavelength Sensor Distance Assembly line automation OPB710 Transistor Machine automation OPB710F Machine safety 935 nm 0.250 (6.35mm) OPB730 End of travel sensor Darlington OPB730F Door sensor OP710 Bottom View 3 4 2 1 OPB730 3 4 MILLIMETERS DIMENSIONS ARE IN: INCHES Pin LED Pin Transistor 3 Cathode 4 Collector 2 1 2 Anode 1 Emitter Ro HS Storage Temperature Range -20 C to +85 C Operating Temperature Range 0 C to +70 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 3 V (2) Power Dissipation 75 mW Output Photosensor Collector-Emitter Voltage OPB710, OPB710F 30 V OPB730, OPB730F 15 V Emitter -Collector Voltage 5 V Collector DC Current 25 mA (3) Power Dissipation 150 mW Input Diode (see OP165W for additional information) V Forward Voltage - - 1.5 V I = 50 mA F F I Reverse Current - - 100 A V = 3 V R R Output Phototransistor (See OP505W for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E Collector Dark Current 2 I OPB710, OPB710F - - 100 nA V = 5 V, I = 0, E 0.1 W/cm CEO CE F E OPB730, OPB730F - - 250 Combined (5) Crosstalk I OPB710, OPB710F - - 100 CX nA I = 50 mA, V = 5 V (no reflecting surface) F CE OPB730, OPB730F - - 500 (4) On-State Collector Current I OPB710, OPB710F 150 - - A I = 50 mA, V = 5 V, d = 0.250 (6.35 mm) C(ON) F CE OPB730, OPB730F 1 - - mA Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) Derate linearly 3.33 mW/C above 25 C. (4) Measured using Eastman Kodak neutral white test card having 90% diffuse reefl ctance located .250 inch (6.35 mm) from the face of the OPB710/ OPB730. Reference: Eastman Kodak, Catalog E 152 7795. (5) Crosstalk (ICX) is the collector current measured with the indicated current on the input diode and with no reefl cngti surfa ce. Ambient light is ex- cluded with a black box.