DF3A6.8LFVL3F Toshiba

DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD DF3A6.8LFV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 2 The mounting of two devices in an ultra-compact package enables a 3 reduction in the number of parts and in the mounting cost. Low terminal capacitance: C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. CATHODE1 Power dissipation P 150* mW VESM 2. CATHODE2 Junction temperature T 150 C j 3. ANODE Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. Weight: 1.5 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between cathode and anode) Start of commercial production 2005-05 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A6.8LFV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) Q1 Q2 CU C V T R I V Z Z 10 100 m Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 0 5 1 2 3 4 6 7 8 0 1 2 3 4 5 6 7 8 9 10 Reverse voltage V (V) R Zener voltage V (V) Z 2 2014-03-01 Zener current I (A) Z Total capacitance C (pF) T