X-On Electronics has gained recognition as a prominent supplier of MBR3045CT schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR3045CT schottky diodes & rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

MBR3045CT Taiwan Semiconductor

MBR3045CT electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.MBR3045CT
Manufacturer: Taiwan Semiconductor
Category:Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30 Amp 45 Volt Common Cathode
Datasheet: MBR3045CT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8694 ea
Line Total: USD 2.87

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 2.8694
10 : USD 2.4927
100 : USD 2.0111
500 : USD 1.5925
1000 : USD 1.5681
5000 : USD 1.5356

0 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4605
10 : USD 1.242
100 : USD 1.0189
500 : USD 0.8867
1000 : USD 0.7647
2500 : USD 0.7578
4000 : USD 0.7521
12000 : USD 0.7268
28000 : USD 0.7095

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Operating Temperature Range
Type
Width
Brand
Factory Pack Quantity :
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We are delighted to provide the MBR3045CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR3045CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

VS-MBR3045CTPbF, VS-MBR3045CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common TO-220AB Guard ring for enhanced ruggedness and long cathode term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition (-N3 only) I 2 x 15 A F(AV) V 45 V R DESCRIPTION V at I See Electrical table F F This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier I max. 100 mA at 125 C RM technology allows for reliable operation up to 150 C T max. 150 C J junction temperature. Typical applications are in switching Diode variation Common cathode power supplies, converters, freewheeling diodes, and reverse battery protection. E 10 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 30 A F(AV) V 35/45 V RRM I T = 123 C (per leg) 30 FRM C A I t = 5 s sine 1020 FSM p V 20 A , T = 125 C 0.6 V F pk J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR3045CTPbF VS-MBR3045CT-N3 UNITS Maximum DC reverse voltage V R 45 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 15 Maximum average I T = 123 C, rated V F(AV) C R forward current per device 30 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 123 C 30 FRM R C Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated 1020 V applied RRM Non-repetitive peak surge current I FSM Surge applied at rated load conditions halfwave, 200 single phase, 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 5 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94292 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR3045CTPbF, VS-MBR3045CT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 30 A T = 25 C 0.76 J (1) Maximum forward voltage drop V 20 A 0.6 V FM T = 125 C J 30 A 0.72 T = 25 C 1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 100 J Threshold voltage V 0.29 V F(TO) T = T maximum J J Forward slope resistance r 13.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 800 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink Only for TO-220 Maximum thermal resistance, DC operation R 50 thJA 2 For D PAK and TO-262 junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AB MBR3045CT Revision: 26-Aug-11 Document Number: 94292 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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