ESDA8V2-1J STMicroelectronics

ESDA8V2-1J EOS and ESD Transil protection for charger and battery port Features Breakdown voltage V = 8.2 V BR Unidirectional device High peak power dissipation: 500 W (8/20 s waveform) A ESD protection level better than K IEC 61000-4-2, level 4: 30 kV contact discharge Low leakage current (< 0.5 A 5 V) SOD-323 Benefits High EOS and ESD protection level High integration Figure 1. Functional diagram (top view) Suitable for high density boards Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): 8kV Applications Description This product is particularly recommended for the protection of power supply lines of portable The ESDA8V2-1J is a unidirectional single line devices, where EOS and ESD transient Transil diode designed specifically for the overvoltage protection in sensitive equipment is protection of integrated circuits in portable required, such as: equipment and miniaturized electonic devices Computers subject to EOS and ESD transient overvoltages. Printers Communication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of STMicroelectronics August 2009 Doc ID 15646 Rev 1 1/7 www.st.com 7 Characteristics ESDA8V2-1J 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge: IEC 61000-4-2 air discharge on input pin 30 V kV PP IEC 61000-4-2 contact discharge on input pin 30 MIL STD 883G - Method 3015-7: class 3B 30 (1) P Peak pulse power dissipation (8/20 s) T = T 500 W PP j initial amb I Peak pulse current (8/20 s) 25 A PP T Junction temperature range -40 to +125 C j T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit Table 2. Electrical characteristics (definitions) I Symbol Parameter I V Breakdown voltage F BR I Leakage current V RM RM V Stand-of voltage V VV V F RM CL BR RM VVVVVV I RM V Clamping voltage CL I R I Peak pulse current PP Slope= 1/R d I C Input capacitance PP Table 3. Electrical characteristics (values, T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 8.2 - - V BR R I Leakage current V V = 5 V -0.1 0.5 A RM RM RM I = 1 A - - 11 V PP Clamping voltage V I = 5 A - - 13 V CL PP (8/20 s waveform) I = 25 A - - 20 V pp V = 0 V, F = 1 MHz, R osc C Input capacitance - 210 250 pF V = 30 mV osc 2/7 Doc ID 15646 Rev 1