BC141-16 STMicroelectronics

BC141-16 GENERAL PURPOSE TRANSISTOR DESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161-16. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C I Collector Current 1 A C I Base Current 0.1 A B o P Total Dissipation at T 25 C 0.65 W tot amb o 3.7 W at T 25 C C o T Storage Temperature -55 to 175 C stg o T Max. Operating Junction Temperature 175 C j 1/5 January 2003 BC141-16 THERMAL DATA o R Thermal Resistance Junction-Case 35 C/W thj-case o R Max 200 C/W thj-amb Thermal Resistance Junction-Ambient Max o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 60 V 100 nA CES CE o Current (V = 0) V = 60 V T = 150 C 100 A BE CE C V * Collector-Base I = 100 A 100 V (BR)CBO C Breakdown Voltage (I = 0) E V(BR)CEO* Collector-Emitter IC = 30 mA 60 V Breakdown Voltage (I = 0) B V * Emitter-Base 7V (BR)EBO I = 100 A E Breakdown Voltage (I = 0) C V * Collector-Emitter I = 100 mA I = 10 mA 0.1 V CE(sat) C B Saturation Voltage I = 500 mA I = 50 mA 0.35 V C B I = 1 A I = 100 mA 0.6 1 V C B V * Base-Emitter On I = 1 A V = 1 V 1.25 1.8 V BE(on) C CE Voltage h * DC Current Gain I = 100 A V = 1 V 90 FE C CE 100 160 250 I = 100 mA V = 1 V C CE I = 1 A V = 1 V 30 C CE f Transition Frequency I = 50 mA V = 10 V 50 MHz T C CE CCBO Collector-Base IE = 0 VCB = 5 V f = 1MHz 12 25 pF Capacitance t Turn-on Time I = 100 mA I = 5 mA 250 ns on C B1 t Turn-off Time I = 100 mA I = I = 5 mA 850 ns off C B1 B2 * Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/5