MPS6520
MPS6521
www.centralsemi.com
SILICON
DESCRIPTION:
NPN TRANSISTORS
The CENTRAL SEMICONDUCTOR MPS6520 and
MPS6521 are silicon NPN epitaxial transistors designed
for complementary amplifier applications requiring
low noise and high DC current gains. The PNP
complementary devices are MPS6522 and MPS6523
respectively.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 40 V
CBO
Collector-Emitter Voltage V 25 V
CEO
Emitter-Base Voltage V 4.0 V
EBO
Continuous Collector Current I 100 mA
C
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I V=30V 50 nA
CBO CB
I V =30V, T=60C 1.0 A
CBO CB A
BV I=500A 25 V
CEO C
BV I=10A 4.0 V
EBO E
V I =50mA, I=5.0mA 0.5 V
CE(SAT) C B
f V =10V, I=2.0mA 300 MHz
T CE C
f V =10V, I=10mA 400 MHz
T CE C
C V =10V, I =0, f=100kHz 3.5 pF
ob CB E
NF V =5.0V, I=10A,
CE C
R =10K, BW=15.7kHz,
S
3.0dB points @ 10Hz and 10kHz 3.0 dB
MPS6520 MPS6521
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
h V =10V, I=100A 100 - 150 -
FE CE C
h V =10V, I=2.0mA 200 400 300 600
FE CE C
R1 (11-November 2014)MPS6520
MPS6521
SILICON
NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (11-November 2014)
www.centralsemi.com