RClamp2594N Low Capacitance RailClamp 4-Line Surge and ESD Protection for Ethernet Interfaces PROTECTION PRODUCTS Description Features Transient Protec tion to R Clamp2594N is specifically designed to provide IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contac t) secondar y surge and ESD protec tion on high-speed IEC 61000-4-4 (EFT ) 4kV (5/50ns) por ts. R Clamp2594N integrates low capacitance, surge - IEC 61000-4-5 (Lightning) 35A (8/20s) rated steer ing diodes with a high power transient Ver y Small PCB Area voltage suppressor ( T VS). The T VS utilizes snap -back Protec ts four H igh-Speed Data Lines or crow-bar technology to minimize device clamping Wor k ing Voltage: 5V Low Capacitance: 3pF M aximum voltage and features high surge cur rent capabilit y of 35A D ynamic R esistance: 0.05 Ohms ( Typ) (tp=8/20us). ESD charac ter istics are highlighted by high S olid-State Silicon-Avalanche Technology ESD withstand voltage (+/-30kV per IEC 61000-4-2) and ex tremely low dynamic resistance (0.05 Ohms t ypical). Mechanical Characteristics Each device will protec t four lines operating at 5 volts. SLF3020P10T Pack age Pb -Free, Halogen Free, R oHS/WEEE Compliant R Clamp2594N is in a 10-pin SLF3020P10T pack age. I t Nominal Dimensions: 3.0 x 2.0 x 0.40 mm measures 3.0 x 2.0 mm with a nominal height of only Lead Finish: M atte Sn Plate 0.4mm. The leads are finished with lead-free matte Sn M olding Compound Flammabilit y R ating: UL 94V-0 plate. M ar k ing : M ar k ing Code + Date Code Pack aging : Tape and R eel Applications Gigabit Ether net 2.5GbE I ntegrated M agnetics / RJ-45 Connec tors Central office Equipment I ndustr ial Equipment LVDS I nter faces Functional Schematic Pin Configuration Pin 1 Pin 4 Line 1 In Line 3 In Line 1 Line 1 1 In Out Line 2 Line 2 2 In Out Pin 10 Pin 7 Line 1 Out Line 3 Out Pin 2 Pin 5 Tab Line 2 In Line 4 In Line 3 Line 3 In Out Pin 9 Pin 6 Line 4 Line 4 Line 2 Out Line 4 Out In Out Pin 3, 8 Center tab RClamp2594N Page 1 www.semtech.com Final Datasheet Rev 2.0 Semtech July 14, 2016Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 300 W PK Peak Pulse Cur rent (tp = 8/20s) I 35 A PP (1) ESD per IEC 61000-4-2 (Contac t) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 30 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 125 C R everse Stand- O ff Voltage V 5 V R WM Any I/O Pin to GND I = 10mA, t O O R everse Breakdown Voltage V -40 C to 125 C 6.5 9.5 11.5 V BR Any I/O Pin to GND O Holding Cur rent I T = 25 C 75 150 250 mA H O T = 25 C 0.01 0.100 A R everse Leak age Cur rent I V = 5V R R WM O T = 125 C 0.03 0.325 A I = 35A, tp = 8/20s, (2) PP Clamping Voltage V 7.5 8.5 V C Line 1 to Line 2 or Line 3 to Line 4 I = 4A, tp = 0.2/100ns ( TLP) PP (3) ESD Clamping Voltage V 4.2 V C Any I/O Pin to GND I = 16A, tp = 0.2/100ns ( TLP) (3) PP ESD Clamping Voltage V 4.7 V C Any I/O Pin to GND tp = 0.2/100ns ( TLP) (3), (4) D ynamic R esistance R 0.05 Ohms DYN Any I/O Pin to GND V = 0V, f = 1MH z R Junc tion Capacitance C Line 1 to Line 2 or Line 3 to Line 4 2.1 3 pF J O T = 25 C Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 2 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp2594N Page 2 www.semtech.com Final Datasheet Rev 2.0 Semtech July 14, 2016