X-On Electronics has gained recognition as a prominent supplier of SCT3030ALGC11 mosfet across the USA, India, Europe, Australia, and various other global locations. SCT3030ALGC11 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SCT3030ALGC11 ROHM

SCT3030ALGC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3030ALGC11
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
Datasheet: SCT3030ALGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 30.7306 ea
Line Total: USD 30.73

Availability - 307
Ships to you between
Fri. 07 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
151 - WHS 1


Ships to you between Fri. 07 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 30.6475
10 : USD 30.59
25 : USD 26.1165
50 : USD 26.0935
100 : USD 24.886
250 : USD 24.84
450 : USD 24.8285
900 : USD 24.817
2700 : USD 24.8055

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SCT3030ALGC11 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3030ALGC11 and other electronic components in the MOSFET category and beyond.

SCT3030AL N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 30m W DS(on) I 70A D (3) P 262W (2) D (1) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating RoHS compliant Packing Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3030AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C 70 A I c D Continuous drain current *1 T = 100C I 49 A c D *2 Pulsed drain current I 175 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op Junction temperature T 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001SCT3030AL Datasheet lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j I Gate - Source leakage current V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 13.3mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 27A GS D Static drain - source *5 T = 25C - 30 39 R m W j DS(on) on - state resistance T = 125C - 39.6 - j Gate input resistance R f = 1MHz, open drain - 7 - W G www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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