RSB12JS2T2R ROHM

Data Sheet Low Capacitance Protection Device RSB12JS2 Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.0 0.5 0.5 1.60.1 0.220.05 0.130.05 (6) (5) (4) Features 0.3 0.25 0.25 0.15 0.15 1) Ultra small mold type. (EMD6) 2) Low capacitance 3) Bi direction 00.1 0.4 EMD6 (1) (2) (3 ) 0.5 0.5 Construction 1.00.1 0.50.05 (6)(5) (4) Silicon Epitaxial Planar Structure ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3) Please make 3 and 6 Pin open in circuit upon use. Taping specificationsUnit : mm +0.1 2.00.05 4.00.1 1.5 0 0.30.1 1PIN 0.80.1 4.00.1 1.70.05 0.650.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm150W Junction temperature Tj 150 C Storage temperature 55 to 150 Tstg C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C -1 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/2 1.20.1 1.60.1 1.650.1 5.50.2 0 0.1 3.50.05 1.750.1 ~ 0.45 8.00.2 1.650.01 1.55Data Sheet RSB12JS2 Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 100 1 Ta=25 Ta=75 Ta=75 10 Ta=125 Ta=25 0.1 1 1 Ta=-25 Ta=150 0.1 Ta=-25 0.01 0.01 0.001 0.001 0.0001 0.1 12 13 14 15 16 17 01 234 567 89 012 345 6789 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 10 13.8 1.5 Ta=25 Ta=25 Ta=25 9 1.4 IZ=5mA f=1MHz VR=9V 8 13.7 n=30pcs 1.3 VR=0V n=30pcs n=10pcs 7 1.2 6 1.1 13.6 5 1 4 13.5 0.9 AVE:0.996pF 3 0.8 AVE:13.572V AVE:0.3089nA 2 0.7 13.4 0.6 1 0.5 13.3 0 Vz DISRESION MAP Ct DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 2/2 ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)