RPI-0129

1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 DISTANCE : d (mm) RPI-0129 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 50 mA DSC(Digital steal camera) Reverse voltage VR 5 V DVC(Digital video camera) Power dissipation PD 80 mW Digital handy phone Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Features Collector current IC 30 mA 1) Ultraminiature SMD type. Collector power dissipation PC 80 mW 2) Gap 1.2mm. Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +85 C Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.3 1.6 VIF=50mA IR 10 A VR=5V Reverse current Dark current ICEO 0.5 A VCE=10V Peak sensitivity wavelength P 800 nm Collector current IC 0.95 4.95 mA VCE=5V, IF=20mA IF=20mA, IC=0.1mA Collector-emitter saturation voltage VCE(sat) 0.4 V Rise time tr 10 s Response time VCC=5V, IF=20mA, RL=100 Fall time 10 s tf Cut-off frequency fC 1 MHz IF=50mA Non-coherent Infrared light emitting diode used. Peak light emitting wavelength P 950 nm VCC=5V, IC=1mA, RL=100 tr tf s Response time 10 This product is not designed to be protected against electromagnetic wave. Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 1.2 50 25C 1.0 50 0C d 25C 40 50C 40 0.8 75C 30 0.6 30 20 0.4 20 10 0.2 10 0 0 0 0 0.5 1.0 1.5 2.0 2.5 20 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward distance ( ) Fig.2 Forward current falloff voltage d 120 100 100 80 PD PC 80 60 60 40 40 20 20 VCE=5V IF=20mA 0 0 20 0 20 40 60 80 100 25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature temperature RELATIVE COLLECTOR CURRENT : Ic (%) Output photo- Input (LED) Photo Infrared Transfer Output Input ( ) transistor light characteristics charac- charac- transistor emitter teristics teristics diode RELATIVE COLLECTOR CURRENT : Ic (%) POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) FORWARD CURRENT : IF (mA)Dimensions (Unit : mm) Notes: (4-0. 3) 1. Unspecified tolerance shall be 0.2 . 2. Dimension in parenthesis are show for reference. 1. 0 1. 6 3. 6 2. 6 1. 2 (0. 7) (2-0. 1) C0. 2 C0. 4 C0. 4 optical center 2-R0. 3 Internal Connection diagram (2. 90) Emitter Cathode (1. 28) Collecter Anode 5 100 1000 4 100 VCE=30V RL=1k 3 VCE=20V 10 VCE=10V RL=500 10 2 1 RL=100 1 0.1 1 0 0 5 10 15 20 25 0.05 0.1 1 10 25 0 25 50 75 100 FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : IC (mA) AMBIENT TEMPERATURE : Ta (C) Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. forward current collector current ambient temperature 7 Input VCC 6 IF=30mA 5 Input 25mA 4 Output 20mA 90% RL 15mA 3 10% Output td 10mA 2 tr tf td : Delay time 1 5mA Rise time (time for output current to rise from t r : 10% to 90% of peak current) 0 0 248610 t f : Fall time (time for output current to fall from 90% COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current) Fig.10 Output characteristics 2010.04 Rev.A Fig.11 Response time measurement circuit COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 2. 8 ( 2. 35 ) (4-0. 6) 2. 2 ( 1. 60 ) 0. 5 0. 15 RESPONSE TIME : tr (s) (0. 05) (2-0. 2) (0. 75) (4-0. 2) 3. 3 DARK CURRENT : ICEO (nA) (0. 3)