X-On Electronics has gained recognition as a prominent supplier of RFUH20TF6SFHC9 diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. RFUH20TF6SFHC9 diodes - general purpose, power, switching are a product manufactured by ROHM. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

RFUH20TF6SFHC9 ROHM

RFUH20TF6SFHC9 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RFUH20TF6SFHC9
Manufacturer: ROHM
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 600V VR 20A IO ITO-220AC; TO-220NFM
Datasheet: RFUH20TF6SFHC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7595 ea
Line Total: USD 1.76

Availability - 805
Ships to you between
Mon. 10 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

RFUH20TF6SFHC9 More Buying Options & Price Grid(s)

Availability Price Quantity
805 - WHS 1


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7595
10 : USD 1.4605
100 : USD 1.2305
500 : USD 1.0626
1000 : USD 0.9142
5000 : USD 0.9073
10000 : USD 0.8774
25000 : USD 0.8568

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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We are delighted to provide the RFUH20TF6SFHC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH20TF6SFHC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFUH20TF6SFH Serise Dimensions(Unit : mm) Structure Super Fast Recovery Applications General rectification RFUH20 TF6S Features 1)Ultra low switching loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=27C 20 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =20A 1.8 2.8 Forward voltage F V F V =600V Reverse current I 0.1 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH20TF6SFH 100 100000 Tj=150 C Tj=125 C 10000 Tj=150 C 10 Tj=75 C Tj=125 C 1000 Tj=75 C Tj=25 C 100 1 Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 V =600V I =20A R F 1950 Tj=25 C Tj=25 C 1900 1850 AVE:1915mV 100 1800 1750 1700 AVE:86.5nA 1650 1600 10 I DISPERSION MAP V DISPERSION MAP R F 1000 350 f=1MHz f=1MHz 345 V =0V R 340 Tj=25 C 335 100 330 AVE:315pF 325 320 10 315 310 305 1 300 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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