X-On Electronics has gained recognition as a prominent supplier of QS8K21TR mosfet across the USA, India, Europe, Australia, and various other global locations. QS8K21TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

QS8K21TR ROHM

Hot QS8K21TR electronic component of ROHM
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See Product Specifications
Part No.QS8K21TR
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 45V 4A 8PIN
Datasheet: QS8K21TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

150: USD 0.2714 ea
Line Total: USD 40.71

Availability - 4127
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 150  Multiples: 1
Pack Size: 1
Availability Price Quantity
1982 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8752
10 : USD 0.7291
100 : USD 0.583
500 : USD 0.5083
1000 : USD 0.4255
3000 : USD 0.4071
6000 : USD 0.4071
9000 : USD 0.391

2706 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 154
Multiples : 1
154 : USD 0.6899
250 : USD 0.6622
500 : USD 0.6383
1000 : USD 0.6175
2500 : USD 0.5993

155 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 154
Multiples : 1
154 : USD 0.6899

4127 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 150
Multiples : 1
150 : USD 0.2714
200 : USD 0.2697
500 : USD 0.2584
1000 : USD 0.2552
2000 : USD 0.2535
3000 : USD 0.2502

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QS8K21TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8K21TR and other electronic components in the MOSFET category and beyond.

QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET llOutline TSMT8 V 45V DSS R (Max.) 53m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 20 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 QS8K21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 4A - 38 53 GS D Static drain - source *4 R V = 4.5V, I = 4A - 48 67 m DS(on) GS D on - state resistance V = 4V, I = 4A - 53 75 GS D Gate input resistance R f = 1MHz, open drain - 6 - G Forward Transfer *4 Y V = 10V, I = 4A 2 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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