BSS64A Datasheet High-voltage Amplifier Transistor (100V, 100mA) llOutline SOT-23 Parameter Value V 100V CEO I 100mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =100V) CEO 2)Complements the BSS63A. llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS64A 2924 T116 180 8 3000 K9F (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 100 V CEO V Emitter-base voltage 6 V EBO I 100 mA C Collector current *1 I 200 mA CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 100 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E V = 90V - - 100 nA CB I Collector cut-off current CBO V = 90V, T = 150 - - 50 A CB a I Emitter cut-off current V = 6V - - 100 nA EBO EB V 1 I = 25mA, I = 2.5mA - 80 210 mV CE(sat) C B Collector-emitter saturation voltage V 2 CE(sat) I = 100mA, I = 10mA - 160 300 mV C B Base-emitter saturation voltage V I = 25mA, I = 2.5mA - 770 900 mV BE(sat) C B Base-emitter turn V V = 6V, I = 1mA 580 - 800 mV BE(on) CE C on voltage h 1 V = 1V, I = 10mA 30 - - FE CE C DC current gain - h 2 V = 1V, I = 25mA 30 - - FE CE C V = 5V, I = -1mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 2.5 4.0 pF ob f = 1MHz *1 Pw=10ms,Single pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.