BSS63A High-voltage Amplifier Transistor Datasheet (-100V,-100mA) llOutline SOT-23 Parameter Value V -100V CEO I -100mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =-100V) CEO 2)Complements the BSS64A. llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS63A 2924 T116 180 8 3000 K8N (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -110 V CBO V Collector-emitter voltage -100 V CEO V Emitter-base voltage -6 V EBO I -100 mA C Collector current *1 I -200 mA CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -110 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -100 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E V = -90V - - -100 nA CB I Collector cut-off current CBO V = -90V, T = 150 - - -50 A CB a I Emitter cut-off current V = -6V - - -100 nA EBO EB V 1 I = -25mA, I = -2.5mA - -100 -230 mV CE(sat) C B Collector-emitter saturation voltage V 2 CE(sat) I = -100mA, I = -10mA - -230 -500 mV C B Base-emitter saturation voltage V I = -25mA, I = -2.5mA - -750 -900 mV BE(sat) C B Base-emitter turn V V = -6V, I = -1mA -580 - -800 mV BE(on) CE C on voltage h 1 V = -1V, I = -10mA 30 - - FE CE C DC current gain - h 2 V = -1V, I = -25mA 30 - - FE CE C V = -5V, I = 25mA, CE E f Transition frequency - 200 - MHz T f = 100MHz V = -10V, I = 0A CB E C Output capacitance - 3.5 5.0 pF ob f = 1MHz *1 Pw=10ms,Single pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.