TGF2956 Qorvo

TGF2956 55 Watt Discrete Power GaN on SiC HEMT Applications Defense & Aerospace Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 12 GHz 47.6 dBm Nominal PSAT at 3 GHz 69.7% Maximum PAE at 3 GHz 19.3 dB Nominal Power Gain at 3 GHz Bias: V = 32 V, I = 200 mA D DQ Technology: TQGaN25 on SiC Chip Dimensions: 1.01 x 2.88 x 0.10 mm General Description Pad Configuration The TriQuint TGF2956 is a discrete 10.08 mm GaN on Pad No. Symbol SiC HEMT which operates from DC-12 GHz. The 1-8 V / RF IN G TGF2956 is designed using TriQuints proven TQGaN25 9-12 V / RF OUT D production process. This process features advanced Backside Source / Ground field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications. Ordering Information Lead-free and RoHS compliant. Part ECCN Description TGF2956 3A001b.3.b 55 Watt GaN HEMT Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 1 of 19 - 2014 TriQuint www.triquint.com TGF2956 55 Watt Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Drain to Gate Voltage (V ) 100 V DG Drain Voltage Range (V ) 32 V D Drain Voltage (VD) 40 V Drain Quiescent Current (IDQ) 200 mA Gate Voltage Range (VG) -10 to 0 V (1) Drain Current Under RF Drive ( I ) 3.5 A (Typ.) D Drain Current (ID) 6 A Pinch-off Gate Voltage (VG) 3.5 V (Typ.) Gate Current (I ) -10 to 16.8mA G Channel Temperature (TCH) 225C (Max.) CW Power Dissipation (P ) 53 W D (1) 10% pulses at 3GHz, Power Tuned CW Input Power (P ) 10GHz 40 dBm IN Channel Temperature (T ) 275C CH Mounting Temperature (30 Sec.) 320C Storage Temperature 65 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Datasheet: Rev A 10-20-14 Disclaimer: Subject to change without notice - 2 of 19 - 2014 TriQuint www.triquint.com