SFH 2700 FA Osram

www.osram-os.com Produktdatenblatt Version 1.1 SFH 2700 FA SFH 2700 FA CHIPLED Silicon PIN Photodiode Applications Industrial Automation (Machine controls, Light barriers, Vision controls) Features: Package: black epoxy ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Very small SMT package Especially suitable for applications from 700 nm to 1100 nm Ordering Information Type Photocurrent Photocurrent Ordering Code typ. E = 0.5 mW/cm = 850 nm V = 5 VE = 0.5 mW/cm = 850 nm V = 5 V e R e R I I P P SFH 2700 FA 1.2 A 1.5 A Q65112A4434 1 Version 1.0 2018-06-13 SFH 2700 FA Maximum Ratings Parameter Symbol Values Operating Temperature T min. -40 C op max. 100 C Storage temperature T min. -40 C stg max. 100 C Reverse voltage V max. 16 V R ESD withstand voltage V max. 2 kV ESD acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Characteristics T = 25 C A Parameter Symbol Values Wavelength of max sensitivity typ. 890 nm S max Spectral range of sensitivity typ. 700 ... 1100 10% nm Radiant sensitive area A typ. 0.35 mm Dimensions of active chip area L x W typ. 0.59 x 0.59 mm x mm Half angle typ. 60 Dark current I typ. 0.045 nA R V = 5 V max. 5 nA R Open-circuit voltage V min. 290 mV O E = 0.5 mW/cm = 850 nm typ. 300 mV e Short-circuit current I typ. 1.4 A SC E = 0.5 mW/cm = 850 nm e Rise time t typ. 0.12 s r V = 5 V R = 50 = 850 nm R L Fall time t typ. 0.12 s f V = 5 V R = 50 = 850 nm R L Forward voltage V typ. 0.8 V F I = 5 mA F Capacitance C typ. 4.6 pF 0 V = 0 V f = 1 MHz E = 0 R 2 Version 1.0 2018-06-13