NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND www.onsemi.com The HGTG10N120BND is a NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss ofabipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302. Features 35 A, 1200 V, T = 25 C C 1200 V Switching SOA Capability Typical Fall Time: 140 ns at T = 150 C TO2473LD J CASE 340CK Short Circuit Rating Low Conduction Loss This is PbFree Device MARKING DIAGRAMS Y&Z&3&K 10N120BND Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot 10N120BND = Specific Device Code ORDERING INFORMATION Part Number Package Brand HGTG10N120BND TO247 10N120BND NOTE: When ordering, use the entire part number. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: December, 2020 Rev. 2 HGTG10N120BND/DHGTG10N120BND ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless Otherwise Specified) C Description Symbol HGTG10N120BND Units Collector to Emitter Voltage BV 1200 V CES Collector Current Continuous I 35 A C25 At T = 25C C I 17 A At T = 110C C110 C Collector Current Pulsed (Note 1) I 80 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C (Figure 2) SSOA 55 A at 1200 V J Power Dissipation Total at T = 25C P 298 W C D Power Dissipation Derating T > 25C 2.38 W/C C Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Short Circuit Withstand Time (Note 2) at V = 15 V t 8 s GE SC Short Circuit Withstand Time (Note 2) at V = 12 V t 15 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 840 V, T = 125C, R = 10 . CE(PK) J G www.onsemi.com 2