Hybrid IGBT, 50 A, 650 V AFGHL50T65SQDC th Using the novel field stop 4 generation IGBT technology and the th 1.5 generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and www.onsemi.com Inverter. Features 50 A, 650 V AECQ101 Qualified V = 1.6 V (Typ.) CESat Maximum Junction Temperature : T = 175C J Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 50 A CE(Sat) C Fast Switching Tighten Parameter Distribution G No Reverse Recovery/No Forward Recovery Typical Applications E Automotive On & Off Board Chargers DCDC Converters PFC Industrial Inverter G C MAXIMUM RATINGS E TO2473L Rating Symbol Value Unit CASE 340CX Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 30 MARKING DIAGRAM Collector Current T = 25C I 100 A C C T = 100C 50 C Pulsed Collector Current (Note 1) I 200 A LM &Y&Z&3&K Pulsed Collector Current (Note 2) I 200 A CM AFGHL 50T65SQDC I 40 A Diode Forward Current T = 25C C F 20 T = 100C C Pulsed Diode Maximum Forward Current I 200 A FM Maximum Power Dissipation T = 25C P 238 W D C T = 100C 119 C &Y = ON Semiconductor Logo Operating Junction T , 55 to C J &Z = Assembly Plant Code / Storage Temperature Range T +175 STG &3 = 3Digit Data Code &K = 2Digit Lot Traceability Code Maximum Lead Temp. for Soldering T 300 C L AFGHL50T65SQDC = Specific Device Code Purposes, 1/8 from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 200 A, R = 26 , Inductive Load, Device Package Shipping CC GE C G 100% Tested. AFGHL50T65SQDC TO 247 3L 30 Units / Rail 2. Repetitive Rating: pulse width limited by max. Junction temperature. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2021 Rev. 3 AFGHL50T65SQDC/DAFGHL50T65SQDC THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.63 C/W JC Thermal resistance junctiontocase, for Diode R 1.55 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of Breakdown V = 0 V, 0.6 V/C GE BV CES Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collectoremitter V = 20 V, I 400 nA GE GES shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 50 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 50 A, 1.9 GE C T = 175C J DYNAMIC CHARACTERISTICS Input capacitance V = 30 V, C 3098 pF CE ies V = 0 V, GE Output capacitance C 265 oes f = 1 MHz Reverse transfer capacitance C 9 res Gate charge total V = 400 V, Q 94 nC CE g I = 50 V, C Gate to emitter charge Q 18 ge V = 15 V GE Gate to collector charge Q 23 gc SWITCHING CHARACTERISTICS Turnon delay time T = 25C t 17.6 ns J d(on) VCC = 400 V, Rise time t 6.4 r IC = 12.5 A R = 4.7 Turnoff delay time G t 94.4 d(off) V = 15 V GE Fall time Inductive Load t 14.4 f Turnon switching loss E 131 J on Turnoff switching loss E 96 off Total switching loss E 227 ts Turnon delay time T = 25C t 19.2 ns J d(on) VCC = 400 V, Rise time t 11.2 r IC = 25 A R = 4.7 G Turnoff delay time td 89.6 (off) V = 15 V GE Inductive Load Fall time t 6.4 f Turnon switching loss Eon 311 J Turnoff switching loss Eoff 141 Total switching loss Ets 452 www.onsemi.com 2