X-On Electronics has gained recognition as a prominent supplier of BF862,215 rf jfet transistors across the USA, India, Europe, Australia, and various other global locations. BF862,215 rf jfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf jfet transistors, ensuring timely deliveries around the world.

BF862,215 NXP

BF862,215 electronic component of NXP
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See Product Specifications
Part No.BF862,215
Manufacturer: NXP
Category:RF JFET Transistors
Description: Transistors RF JFET JFET N-CH 20V 10MA
Datasheet: BF862,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 5
Multiples : 1
5 : USD 0.5265
25 : USD 0.4298
100 : USD 0.3619
250 : USD 0.3151
500 : USD 0.3019
1000 : USD 0.298
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.1648
6000 : USD 0.1624
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.5976
30 : USD 0.5697
75 : USD 0.4722
150 : USD 0.4279
375 : USD 0.4266
750 : USD 0.4254
1500 : USD 0.4241
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 0.2567
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 0.5198
10 : USD 0.4254
100 : USD 0.2603
1000 : USD 0.2009
3000 : USD 0.1709
9000 : USD 0.1695
24000 : USD 0.1672
45000 : USD 0.1629
99000 : USD 0.1575
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Continuous Drain Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BF862,215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF862,215 and other electronic components in the RF JFET Transistors category and beyond.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification 2000 Jan 05 Supersedes data of 1999 Jun 29NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 High transition frequency for excellent sensitivity in PIN DESCRIPTION AM car radios 1source High transfer admittance. 2drain 3gate APPLICATIONS Pre-amplifiers in AM car radios. handbook, halfpage 21 DESCRIPTION d Silicon N-channel symmetrical junction field-effect g s transistor in a SOT23 package. Drain and source are interchangeable. 3 Top view MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 20 V DS V gate-source cut-off voltage 0.3 0.8 1.2 V GSoff I drain-source current 10 25 mA DSS P total power dissipation T 90 C 300 mW tot s y transfer admittance 35 45 mS fs T junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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