X-On Electronics has gained recognition as a prominent supplier of NTE5712 scr modules across the USA, India, Europe, Australia, and various other global locations. NTE5712 scr modules are a product manufactured by NTE. We provide cost-effective solutions for scr modules, ensuring timely deliveries around the world.

NTE5712 NTE

NTE5712 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE5712
Manufacturer: NTE
Category:SCR Modules
Description: Module; double series; 1.2kV; 55A; 21MM; Ufmax:1.4V; Ifsm:1.5kA
Datasheet: NTE5712 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 104.9402 ea
Line Total: USD 104.94

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 104.9402
10 : USD 63.18
25 : USD 58.968
50 : USD 55.2797

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 81.858

     
Manufacturer
Product Category
Electrical Mounting
Mounting
Case
Semiconductor Structure
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Gate Current
LoadingGif

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Stock Image NTE5722
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the NTE5712 from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE5712 and other electronic components in the SCR Modules category and beyond.

NTE5712 Powerblock Module Features: Isolated Mounting Base Pressure Contact Technology with Increased Power Cycling Capability Space and Weight Savings Applications: AC/DC Motor Drives DC Supply for PWM Inverter Electrical Specifications: Mean On State Current, I T(AV) (180 Half Sine Wave, 50Hz, Single Side Cooled, T = +85C, T = +125C) ......... 55A C J RMS OnState Current (T = +125C), I ......................................... 86A J T(RMS) Repetitive Peak OffState Voltage (t = 10ms, V = 1400V, T = +125C), V ....... 1200V p DSM J DRM Repetitive Peak Reverse Voltage (t = 10ms, V = 1400V, T = +125C), V ........ 1200V p RSM J DRM Repetitive Peak Current (V /V = 1200V, T = +125C), I , I ................. 8mA DRM RRM J DRM RRM Surge On State Current (V = 720V, 10ms Half Sin Wave, T = +125C), I ........... 1.5KA R J TSM 2 2 2 3 I t for Fusing Coordination (V = 720V, 10ms Half Sin Wave, T = +125C), I t ..... 9.35A s*10 R J Threshold Voltage (T = +125C), V .............................................. 0.85V J TO OnState Slope Resistance (T = +125C), r ...................................... 3.47m J T Peak OnState Voltage (I = 170A, T = +25C), V ................................. 1.5V TM J TM Critical Rate of Rise of OffState Voltage (V = 804V, T = +125C), dv/dt ............ 800V/s DM J Critical Rate of Rise of On State Current, di/dt (I = 110A, Gate Source 1.5A, t 0.5s, Repetitive, T = +125C) ............ 100A/s TM r J Gate Trigger Current (V = 12V, I = 1A, T = +25C), I A A J GT Minimum .................................................................. 30mA Maximum ................................................................ 100mA Gate Trigger Voltage (V = 12V, I = 1A, T = +25C), V A A J GT Minimum ................................................................... 0.8V Maximum .................................................................. 2.5V Holding Current (V = 12V, I = 1A, T = +25C), I A A J H Minimum .................................................................. 20mA Maximum ................................................................ 150mA Minimum Isolation Voltage 50Hz, RMS, t = 1min, I = 1mA Max), V ............... 2500V ISOL ISOL Storage Temperature Range, T .......................................... 40 to +140C stg Maximum Thermal Resistance (Single Side Cooled) JunctiontoCase, R ................................................. 0.53C/W thJC CasetoHeat Sink, R ................................................ 0.20C/W thCH Rev. 711G2 K2 AC + + G2 AC K2 K1 G1 .787 (20.0) .787 .550 (14.0) .590 (15.0) (20.0) .787 .500 (20.0) (12.7) 3.150 (79.9) .393 .244 (6.2) Dia (10.0) M5 Screw (3 Places) .110 (.028) x .036 (.009) Faston Terminals 1.195 1.180 (30.0) (29.9) 3.620 (91.9)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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