X-On Electronics has gained recognition as a prominent supplier of NTE56020 triacs across the USA, India, Europe, Australia, and various other global locations. NTE56020 triacs are a product manufactured by NTE. We provide cost-effective solutions for triacs, ensuring timely deliveries around the world.

NTE56020 NTE

NTE56020 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE56020
Manufacturer: NTE
Category:Triacs
Description: Triac; 400V; 25A; 80mA; THT; tube; TO220ISO
Datasheet: NTE56020 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 14.69 ea
Line Total: USD 44.07

Availability - 9
Ships to you between
Tue. 18 Jun to Mon. 24 Jun
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - WHS 1


Ships to you between Tue. 18 Jun to Mon. 24 Jun

MOQ : 5
Multiples : 1
5 : USD 12.0375
25 : USD 9.575
50 : USD 9.425
100 : USD 9.2875
250 : USD 8.525
500 : USD 8.4
1000 : USD 8.2625
2500 : USD 7.875

   
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
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We are delighted to provide the NTE56020 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE56020 and other electronic components in the Triacs category and beyond.

NTE56019 thru NTE56021 TRIAC, 25 Amp Description: The NTE56019, NTE56020 and NTE56021 are 25 Amp TRIACs with a repetitive peak blocking of 200V, 400V and 800V respectively. These devices may be gate triggered from a blocking to con- duction state for either polarity of applied voltage and are designed for AC switching and phase con- trol applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the Gate and MT . 1 Features: Electrically Isolated TO220 Type Package GlassPassivated Junctions Surge Capability: Up to 400A Absolute Maximum Ratings: (T = +25 C, 60Hz, with a resistive load unless otherwise specified) A Repetitive Peak Blocking Voltage (Note 1), V DRM NTE56019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56021 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Conduction Angle of 360 , T = 40 to +125C), I . . . . . . . . . . 25A C T(RMS) Non Repetitive OnState Current (One Cycle), I TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208A 2 2 Fusing Current (t = 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259A s Peak Gate Current (Pulse Width 10s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Dissipation (Pulse Width 10s, I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Gate Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Lead Temperature (During Soldering, 1/16 from case, 10sec max), T . . . . . . . . . . . . . . . . . +230 C L Note 1. For either polarity of MT with reference to MT terminal. 2 1 Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OffState Leakage Current I V = V , T = +25C, Note 1 0.1 mA DRM D DRM J V = V , T = +125C, Note 1 3 mA D DRM J OnState Voltage V I = 25A, Note 1 1.8 V TM T(RMS) Note 1. For either polarity of MT with reference to MT terminal. 2 1Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I V = 12V, T = 40 to +125C 80 mA GT D C Gate Trigger Voltage V V = 12V, Quadrants I, II, and III, Note 2 2.5 V GT D Holding Current I Gate Open, Note 1, Note 3 100 mA H Gate Controlled TurnOn Time t I = 500mA, 0.1s Rise Time 4 s gt GT Critical RateofRise dv/dt V = V , Gate Open, T = +125C, Note 1 250 V/s D DRM C Critical RateofRise, OffState dv/dt V = V , I = 25A, di/dt = 13.5A/ms, 5 V/s c D DRM T Gate Unenergized, Note 1 Note 1. For either polarity of MT with reference to MT terminal. 2 1 Note 2. For either polarity of gate voltage with reference to electrode MT . 1 Note 3. Initial OnState Current = 400mA (DC). .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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