X-On Electronics has gained recognition as a prominent supplier of MTA4ATF51264HZ-2G3B1 memory modules across the USA, India, Europe, Australia, and various other global locations. MTA4ATF51264HZ-2G3B1 memory modules are a product manufactured by Micron. We provide cost-effective solutions for memory modules, ensuring timely deliveries around the world.

MTA4ATF51264HZ-2G3B1 Micron

MTA4ATF51264HZ-2G3B1 electronic component of Micron
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Part No.MTA4ATF51264HZ-2G3B1
Manufacturer: Micron
Category:Memory Modules
Description: DRAM Module DDR4 SDRAM 4Gbyte 260SODIMM
Datasheet: MTA4ATF51264HZ-2G3B1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MTA4ATF51264HZ-2G3B1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA4ATF51264HZ-2G3B1 and other electronic components in the Memory Modules category and beyond.

4GB (x64, SR) 260-Pin DDR4 SODIMM Features DDR4 SDRAM SODIMM MTA4ATF51264HZ 4GB Figure 1: 260-Pin SODIMM (MO-310 R/C C) Features Module Height: 30mm (1.181 in) DDR4 functionality and operations supported as defined in the component data sheet 260-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC4-2666, PC4-2400, and PC4-2133 4GB (512 Meg x 64) V = 1.20V (NOM) DD V = 2.5V (NOM) PP V = 2.5V (NOM) DDSPD Options Marking Nominal and dynamic on-die termination (ODT) for Operating temperature data, strobe, and mask signals Commercial (0C T 95C) None OPER Low-power auto self refresh (LPASR) Package 260-pin DIMM (halogen-free) Z Data bus inversion (DBI) for data bus Frequency/CAS latency On-die V generation and calibration REFDQ 0.75ns CL = 19 (DDR4-2666) -2G6 Single-rank 0.83ns CL = 17 (DDR4-2400) -2G3 2 On-board I C serial presence-detect (SPD) EEPROM 0.93ns CL = 15 (DDR4-2133) -2G1 8 internal banks 2 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control command and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 X26P4QTWDSPK-13-10265 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 atf4c512x64hz.pdf Rev. C 8/16 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB (x64, SR) 260-Pin DDR4 SODIMM Features Table 2: Addressing Parameter 4GB Row address 64K A 15:0 Column address 1K A 9:0 Device bank group address 2 BG0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (512 Meg x 16), 8 banks Module rank address CS0 n Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT40A512M16, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA4ATF51264HZ-2G6 4GB 512 Meg x 64 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA4ATF51264HZ-2G3 4GB 512 Meg x 64 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 MTA4ATF51264HZ-2G1 4GB 512 Meg x 64 17.0 GB/s 0.93ns/2133 MT/s 15-15-15 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA4ATF51264HZ-2G3B1. X26P4QTWDSPK-13-10265 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 atf4c512x64hz.pdf Rev. C 8/16 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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