16GB (x72, ECC, DR) 240-Pin DDR3L VLP UDIMM Features 1.35V DDR3L SDRAM VLP UDIMM MT18KDF2G72AZ 16GB Figure 1: 240-Pin VLP UDIMM (MO-269 R/C-K0) Features Module Height: 18.75mm (0.738in) DDR3L functionality and operations supported as defined in the component data sheet 240-pin, very low profile, unbuffered dual in-line memory module (VLP UDIMM) Fast data transfer rates: PC3-14900 or PC3-12800 Options Marking Operating temperature 16GB (2 Gig x 72) Commercial (0C T 70C) None A V = 1.35V (1.2351.45V) DD Package V = 1.5V (1.4251.575V) DD 240-pin DIMM (halogen-free) Z Backward compatible to V = 1.5V 0.075V DD Frequency/CAS latency V = 3.03.6V DDSPD 1.07ns CL = 13 (DDR3-1866) -1G9 Supports ECC error detection and correction 1.25ns CL = 11 (DDR3-1600) -1G6 Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Dual-rank 2 Onboard I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 8 internal device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef85e70df7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 kdf18c2gx72az.pdf Rev. B 2/15 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16GB (x72, ECC, DR) 240-Pin DDR3L VLP UDIMM Features Table 2: Addressing Parameter 16GB Refresh count 8K Row address 64K A 15:0 Device bank address 8 BA 2:0 Device configuration 8Gb (1 Gig x 8) Column address 2K A 11, 9:0 Module rank address 2 S 1:0 Table 3: Part Numbers and Timing Parameters 16GB Modules 1 Base device: MT41K1G8, 1.35V 8Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KDF2G72AZ-1G9 16GB 2 Gig x 72 14.9 GB/s 1.07/1866 MT/s 13-13-13 MT18KDF2G72AZ-1G6 16GB 2 Gig x 72 12.8 GB/s 1.25/1600 MT/s 11-11-11 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KDF2G72AZ-1G6A1. PDF: 09005aef85e70df7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 kdf18c2gx72az.pdf Rev. B 2/15 EN 2014 Micron Technology, Inc. All rights reserved.