Product Technical OrOrdderer Folder Support NowNow InterFET IFNU404-5-6 IFNU404, IFNU405, IFNU406 Dual Matched N-Channel JFET Features TO-71 Bottom View Source InterFET N0016H Geometry 5 Drain Low Leakage: 10 pA Typical 6 Low Input Capacitance: 3.5 pF Typical Gate 3 7 Gate High Input Impedance Replacement for U404,5,6 2 Drain RoHS Compliant 1 Source SMT, TH, and Bare Die Package options. SOIC8 Top View Applications Low Noise Differential Amplifier Gate 1 8 Gate Differential Amplifier Drain 2 7 Source JFET Input Op-Amps Source 3 6 Drain Description Gate 4 5 Gate The -50V InterFET IFNU404, IFNU405, and IFNU406 JFETs are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. Product Summary Parameters IFNU404 Min IFNU405 Min IFNU406 Min Unit BVGSS Gate to Source Breakdown Voltage -50 -50 -50 V IDSS Drain to Source Saturation Current 0.5 0.5 0.5 mA V Gate to Source Cutoff Voltage -0.5 -0.5 -0.5 V GS(off) G Forward Transconductance 2 2 2 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFNU404 IFNU405 IFNU406 Through-Hole TO-71 Bulk SMPU404 SMPU405 SMPU406 Surface Mount SOIC8 Bulk 7 Tape and Reel: Max 500 Pieces Minimum 500 Pieces SMPU404 SMPU405 SMPU406 13 Tape and Reel: Max 2,500 Pieces SOIC8 Tape and Reel IFNU404COT IFNU405COT IFNU406COT * Chip Orientated Tray (COT Waffle Pack) COT 70/Waffle Pack IFNU404CFT IFNU405CFT IFNU406CFT * Chip Face-up Tray (CFT Waffle Pack) CFT 70/Waffle Pack * Bare die packaged options are designed for matched specifications but not 100% tested Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35099.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFNU404-5-6 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -50 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFNU404, IFNU405, IFNU406 Parameters Conditions Min Typ Max Unit Gate to Source V I = -1A,V = 0V -50 V (BR)GSS G DS Breakdown Voltage Gate to Source I V = -30V, V = 0V -25 pA GSS GS DS Reverse Current VDS = 15V, ID = 200A, TA = 125 C -15 pA I Gate Operating Current G VDS = 15V, ID = 200A, TA = 125 C -10 nA Gate to Source V V = 20V, I = 1nA -0.5 -2.5 V GS(OFF) DS D Cutoff Voltage V Gate Source Voltage V = 20V, I = 200A -0.2 -2.3 V GS DS D Drain to Source V = 20V, V = 0V DS GS I 0.5 10 mA DSS Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFNU404, IFNU405, IFNU406 Parameters Conditions Min Typ Max Unit Forward V = 10V, V = 0V, f = 1kHz 2 7 DS GS GFS mS Transconductance V = 15V, I = 200A, f = 1kHz 1 2 DS D V = 10V, V = 0V, f = 1kHz 20 DS GS GOS Output Conductance S V = 15V, I = 200A, f = 1kHz 2 DS D Ciss Input Capacitance VDS = 15V, ID = 200A, f = 1MHz 8 pF C Reverse Capacitance V = 15V, I = 200A, f = 1MHz 3 pF rss DS D Equivalent Circuit V = 20V, I = 200A, f = 100Hz 20 e DS D nV/ Hz n Input Noise Voltage IFNU404 15 Differential Gate V V GS1 GS2 VDS = 10V, ID = -200A IFNU405 20 mV Source Voltage IFNU406 40 Differential Gate IFNU404 4 V V VDS = 10V, ID = 200A GS1 GS2 Source Voltage with IFNU405 5 mV/C T TA = 25C, TB = 85C Temperature IFNU406 5 IFNU404 95 Common Mode VDD = 10V to 20V, CMRR IFNU405 90 dB Rejection Ratio ID = 200A IFNU406 90 IFNU404-5-6 2 of 4 InterFET Corporation Document Number: IF35099.R00 www.InterFET.com December, 2018