X-On Electronics has gained recognition as a prominent supplier of NE3520S03-A rf jfet transistors across the USA, India, Europe, Australia, and various other global locations. NE3520S03-A rf jfet transistors are a product manufactured by CEL. We provide cost-effective solutions for rf jfet transistors, ensuring timely deliveries around the world.

NE3520S03-A CEL

NE3520S03-A electronic component of CEL
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Part No.NE3520S03-A
Manufacturer: CEL
Category:RF JFET Transistors
Description: N-CHANNEL GAAS HJ-FET, K BAND LOW NOISE AND HIGH-GAIN
Datasheet: NE3520S03-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

11: USD 3.508 ea
Line Total: USD 38.59

Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 11
Multiples : 1
11 : USD 3.508

     
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A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES Low noise figure and high associated gain: NF = 0.65 dB TYP., G = 13.5 dB TYP. f = 20 GHz, V = 2 V, I = 10 mA a DS D K band Micro-X plastic (S03) package APPLICATIONS 20 GHz band DBS LNB Other K band communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3520S03-T1C NE3520S03-T1C-A S03 package 2 kpcs/reel J Embossed tape 8 mm wide (Pb-Free) Pin 4 (Gate) face the perforation side of the tape NE3520S03-T1D NE3520S03-T1D-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3520S03-A ABSOLUTE MAXIMUM RATINGS (T = +25C, unless otherwise specified) A Parameter Symbol Ratings Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V 3.0 V GS Drain Current I I mA D DSS Gate Current I 100 A G Note Total Power Dissipation P 165 mW tot Channel Temperature T +125 C ch Storage Temperature T 65 to +125 C stg 2 Note: Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0029EJ0100 Rev.1.00 Page 1 of 8 Oct 18, 2011 DISCONTINUED Drop-In Replacement: CE3520K3NE3520S03 RECOMMENDED OPERATING RANGE (T = +25C, unless otherwise specified) A Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D Input Power P 0 dBm in ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current I V = 3.0 V 0.5 10 A GSO GS Saturated Drain Current I V = 2 V, V = 0 V 25 40 70 mA DSS DS GS Gate to Source Cut-off Voltage V V = 2 V, I = 100 A 0.2 0.7 1.3 V GS (off) DS D Transconductance gm V = 2 V, I = 10 mA 50 65 mS DS D Noise Figure NF V = 2 V, I = 10 mA, f = 20 GHz 0.65 0.90 dB DS D Associated Gain G 11.5 13.5 dB a R09DS0029EJ0100 Rev.1.00 Page 2 of 8 Oct 18, 2011 DISCONTINUED Drop-In Replacement: CE3520K3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
California Eastern Laboratories
CALIFORNIA MICRO DEV

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