ADA-4743 Silicon Bipolar Darlington Amplifi er Data Sheet Features Description Small Signal gain amplifier Avago Technologies ADA-4743 is an economical, easy-to- Operating frequency DC 2.5 GHz use, general purpose silicon bipolar RFIC gain block am- Unconditionally stable plifi ers housed in a 4-lead SC-70 (SOT-343) surface mount plastic package which requires only half the board space 50 Ohms input & output of a SOT-143 package. Flat, Broadband Frequency Response up to 1 GHz The Darlington feedback structure provides inherent Operating Current: 40 to 80 mA broad bandwidth performance, resulting in useful oper- Industry standard SOT-343 package ating frequency up to 2.5 GHz. This is an ideal device for Lead-free option available small-signal gain cascades or IF amplifi cation. ADA-4743 is fabricated using Avagos HP25 silicon bi- Specifications polar process, which employs a double-diff used single 900 MHz, 3.8V, 60 mA (typ.) polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT 16.5 dB associated gain and high NPN breakdown (25 GHz fT at 6V BVCEO). The 17.1 dBm P 1dB process utilizes industry standard device oxide isolation 32.6 dBm OIP 3 technologies and submicron aluminum multilayer inter- 4.2 dB noise figure connect to achieve superior performance, high uniformi- ty, and proven reliability. VSWR < 2 throughput operating frequency Single supply, typical I = 60 mA d SOT-343 Surface Mount Package Applications Cellular/PCS/WLL base stations Wireless data/WLAN Fiber-optic systems ISM Pin Connections and Package Marking Attention: Observe precautions for handling electrostatic sensitive devices. RFout GND & Vd ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Avago Application Note A004R: GND RFin Electrostatic Discharge Damage and Control. Note: Typical Biasing Configuration Top View. Package marking provides orientation and identification. V = 5 V 3T = Device Code V - V CC cc d R = c I x = Date code character d R C c bypass identifies month of manufacture. RFC C block RF 3Tx RF input output V = 3.8 V d C block 3Tx 1 ADA-4743 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any one of Symbol Parameter Units Maximum these parameters may cause permanent damage. I Device Current mA 90 d 2. Ground lead temperature is 25C. 2 P Total Power Dissipation mW 370 Derate 6.1 mW/C for TL >89C . diss 3. Junction-to-case thermal resistance P RF Input Power dBm 20 in max. measured using 150C Liquid Crystal T Channel Temperature C 150 Measurement method. j T Storage Temperature C -65 to 150 STG 3 Thermal Resistance C/W 163 jc ADA-4743 Electrical Specifications T = 25C, Zo=50, Pin = -25 dBm, I = 60 mA (unless specified otherwise) A d Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max. Std. Dev. I = 60 mA, Zo = 50 d V Device Voltage I = 60 mA V 3.3 3.8 4.3 d d 2 Gp Power Gain ( S 100 MHz dB 16.6 21 1,2 900 MHz 15 16.5 18 Gp Gain Flatness 100 to 900 MHz dB 0.5 0.1 to 2 GHz 1.5 F 3 dB Bandwidth GHz 4 3dB VSWR Input Voltage Standing Wave Ratio 0.1 to 6 GHz 1.7:1 in VSWR Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.5:1 out NF 50 Noise Figure 100 MHz dB 4.1 0.11 1,2 900 MHz 4.2 0.16 P Output Power at 1dB Gain Compression 100 MHz dBm 17.7 1dB 1,2 900 MHz 17.1 rd 3 OIP Output 3 Order Intercept Point 100 MHz dBm 33.4 3 1,2,3 900 MHz 32.6 DV/dT Device Voltage Temperature Coefficient mV/C -4.9 Notes: 1. Typical value determined from a sample size of 500 parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. 3. I) 900 MHz OIP test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone. 3 II) 100 MHz OIP test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone. 3 50 Ohm 50 Ohm Input Output Transmission Transmission DUT (0.5 dB loss) including Bias (0.5 dB loss) Block diagram of 900 MHz production test board used for V , Gain, P , OIP , and NF measurements. d 1dB 3 Circuit losses have been de-embedded from actual measurements. 2