X-On Electronics has gained recognition as a prominent supplier of AS4C64M16MD2-25BCN dram across the USA, India, Europe, Australia, and various other global locations. AS4C64M16MD2-25BCN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C64M16MD2-25BCN

AS4C64M16MD2-25BCN electronic component of Alliance Memory
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Part No.AS4C64M16MD2-25BCN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 1G 1.2V/1.8V 400MHz 64Mx16 Mobile DDR2
Datasheet: AS4C64M16MD2-25BCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 8.2127
10 : USD 5.5134
25 : USD 5.4066
50 : USD 5.3745
100 : USD 4.9044
256 : USD 4.883
512 : USD 4.6266
1024 : USD 4.4983
2048 : USD 4.3594
N/A

Obsolete
     
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Product Category
RoHS - XON
Icon ROHS
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Access Time
Supply Voltage - Max
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Cnhts
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We proudly offer the AS4C64M16MD2-25BCN DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C64M16MD2-25BCN DRAM.

AS4C64M16MD2-25BCN AS4C32M32MD2-25BCN Revision History AS4C64M16MD2-25BCN / AS4C32M32MD2-25BCN 134 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet July. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/129 - Rev.1.0 July 2016AS4C64M16MD2-25BCN AS4C32M32MD2-25BCN KEY FEATURE Double-data rate architecture two data transfers per clock cycle Bidirectional data strobes (DQS, DQS ), These are transmitted/received with data to be used in capturing data at the receiver Differential clock inputs (CK and CK ) Differential data strobes (DQS and DQS ) Commands & addresses entered on both positive and negative CK edges data and data mask referenced to both edges of DQS 8 internal banks for concurrent operation Data mask (DM) for write data Burst Length: 4 (default), 8 or 16 Burst Type: Sequential or Interleave Read & Write latency : Refer to Table 47 Auto Precharge option for each burst access Configurable Drive Strength Auto Refresh and Self Refresh Modes Partial Array Self Refresh and Temperature Compensated Self Refresh Deep Power Down Mode HSUL 12 compatible inputs VDD1/VDD2/VDDQ : 1.8V/1.2V/1.2V No DLL : CK to DQS is not synchronized Edge aligned data output, center aligned data input Auto refresh duty cycle : - 7.8us for -30 to 85 C Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C 64M16MD2-25BCN 400 134-ball FBGA 64Mx16 Commercial -30C to + 85C AS4C32M32MD2-25BCN 134-ball FBGA 32Mx32 400 Commercial -30C to +85C Table 2. Speed Grade Information Speed Grade Clock Frequency tRCD (ns) tRP (ns) RL WL DDR2L-800 18 18 6 400MHz 3 Confidential - 2/129 - Rev.1.0 July 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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