X-On Electronics has gained recognition as a prominent supplier of AS4C128M16D3LC-12BAN dram across the USA, India, Europe, Australia, and various other global locations. AS4C128M16D3LC-12BAN dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C128M16D3LC-12BAN Alliance Memory

AS4C128M16D3LC-12BAN electronic component of Alliance Memory
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Part No.AS4C128M16D3LC-12BAN
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 2G - C DIE 128M x 16 1.35V 800MHz DDR3-1600bpspin Automotive-40 C 105 C 96-ball FBGA
Datasheet: AS4C128M16D3LC-12BAN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.2056 ea
Line Total: USD 12.21

Availability - 193
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
147 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 10.4535
10 : USD 9.844
25 : USD 9.5565
100 : USD 8.648
198 : USD 8.2225
594 : USD 8.1535
2574 : USD 8.1075
5148 : USD 7.8315

   
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We are delighted to provide the AS4C128M16D3LC-12BAN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C128M16D3LC-12BAN and other electronic components in the DRAM category and beyond.

AS4C128M16D3LC-12BAN Revision History 2G DDR3L SDRAM 96ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Jun. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 86 - Rev.1.0 June 2019AS4C128M16D3LC-12BAN 128M x 16 bit DDR3L Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jun. /2019) Features Overview JEDEC Standard Compliant The 2Gb Double-Data-Rate-3L (DDR3L) DRAMs is double data rate architecture to achieve high-speed AEC-Q100 Compliant operation. It is internally configured as an eight bank Power supplies: V & V = +1.35V (1.283V ~ 1.45V) DD DDQ DRAM. Backward compatible to V & V = +1.5V 0.075V DD DDQ The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank Operating temperature: T = -40~105 C (Automotive) C devices. These synchronous devices achieve high speed Supports JEDEC clock jitter specification double-data-rate transfer rates of up to 1600 Mb/sec/pin Fully synchronous operation for general applications. The chip is designed to comply with all key DDR3L Fast clock rate: 800MHz DRAM key features and all of the control and address Differential Clock, CK & CK inputs are synchronized with a pair of externally supplied Bidirectional differential data strobe differential clocks. Inputs are latched at the cross point - DQS & DQS of differential clocks (CK rising and CK falling). All I/Os 8 internal banks for concurrent operation are synchronized with differential DQS pair in a source 8n-bit prefetch architecture synchronous fashion. Pipelined internal architecture These devices operate with a single 1.35V -0.067V / Precharge & active power down +0.1V power supply. Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control Average refresh period - 8192 cycles/64ms (7.8us at -40C T +85C) C - 8192 cycles/32ms (3.9us at +85C T +95C) C - 8192 cycles/16ms (1.95us at +95C T +105C) C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh - Not support self refresh function with T > 95C C Package: Pb and Halogen Free - 96-ball 7.5 x 13 x 1.0mm FBGA Table 1. Ordering Information Org Temperature Product part No Max Clock (MHz) Package 800 128M x 16 Automotive -40C to 105C 96-ball FBGA AS4C 128M16D3 LC-12B AN Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP 800 MHz 11 13.75 13.75 DDR3 L-1600 Confidential - 2 of 86 - Rev.1.0 June 2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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