Product Information

STPS3030CT

STPS3030CT electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 2x15 Amp 30 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

STPS3030CT
STMicroelectronics

1 : USD 4.4532
10 : USD 1.6052
100 : USD 1.2945
500 : USD 1.0667
1000 : USD 0.8782
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STPS3030/CT/CG/CR Low drop power Schottky rectifier Main product characteristics A1 I 2 x 15 A K F(AV) V 30 V RRM A2 T (max) 150 C j K V (max) 0.42 V F Features and benefits A2 Very small conduction losses A2 K Negligible switching losses A1 A1 Extremely fast switching 2 D PAK TO-220AB Low forward voltage drop for higher efficiency STPS3030CG STPS3030CT Low thermal resistance Avalanche capability specified Description Dual Schottky rectifier suited for switch mode A2 power supply and high frequency DC to DC K A1 converters. 2 I PAK 2 2 Packaged in TO-220AB, D PAK and I PAK, this STPS3030CR device is intended for use in low voltage high frequency inverters, free-wheeling and polarity j protection applications. October 2006 Rev 4 1/9 www.st.com 9Characteristics STPS3030CT/CG/CR 1 Characteristics Table 1. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I RMS forward current 30 A F(RMS) T = 135 C Per diode 15 c I Average forward current A F(AV) = 0.5 Per device 30 I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p I Peak repetitive reverse current t = 2 s square F= 1 kHz 1 A RRM p I Non repetitive peak reverse current t = 100 s square 3 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 4100 W ARM p j T Storage temperature range -65 to + 150 C stg (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise of reverse voltage (rated V , T = 25 C) 10000 V/s R j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 2. Thermal resistance Symbol Parameter Value Unit Per diode 1.2 2 2 R Junction to case TO-220AB - D PAK - I PAK th(j-c) Total 0.8 C/W R Coupling 0.4 th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 0.23 1.0 j (1) I Reverse leakage current V = V mA R R RRM T = 125 C 125 180 j T = 25 C I = 15 A 0.44 0.49 j F T = 125 C I = 15 A 0.36 0.40 j F (1) V Forward voltage drop V F T = 25 C I = 30 A 0.53 0.58 j F T = 125 C I = 30 A 0.49 0.53 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.26 x I + 0.0107 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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