Product Information

PMBF4393,215

PMBF4393,215 electronic component of NXP

Datasheet
JFET JFET N-CH 40V 100mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 3000
Multiples : 3000
3000 : USD 0.1472
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 3000
3000 : USD 0.1572
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 0.9702
10 : USD 0.8662
25 : USD 0.4314
100 : USD 0.3285
250 : USD 0.2883
500 : USD 0.255
1000 : USD 0.2041
3000 : USD 0.189
6000 : USD 0.1802
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Series
Drain Source Voltage Vds
Brand
Continuous Drain Current
Gate-Source Breakdown Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391 PMBF4392 PMBF4393 N-channel FETs Product specification April 1995NXP Semiconductors Product specification PMBF4391 N-channel FETs PMBF4392 PMBF4393 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power 3 handbook, halfpage chopper or switching applications in industry. d g s PINNING 12 1 = drain Top view MAM385 2 = source 3= gate Note 1. Drain and source are Fig.1 Simplified outline and symbol, SOT23. interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 Drain-source voltage V max. 40 40 40 V DS Drain current V =20 V V =0 I 50 25 5 mA DS GS DSS Gate-source cut-off voltage 42 0.5V V =20 V I =1 nA V DS D (P)GS 10 5 3 V Drain-source resistance (on) at f = 1 kHz I =0 V =0 R 30 60 100 D GS ds on Feedback capacitance at f = 1 MHz V = 12 V V =0 C 3.5 3.5 3.5 pF GS DS rs Turn-off time V =10 V V =0 DD GS I =12 mA V = 12 V t 20 ns D GSM off I = 6 mA V = 7 V t 35 ns D GSM off I = 3 mA V = 5 V t 50 ns D GSM off April 1995 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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