Product Information

MAPRST1214-6UF

MAPRST1214-6UF electronic component of MACOM

Datasheet
RF Bipolar Transistors 1.2-1.4GHz 6W Gain: 8.75dB

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

11: USD 230.3316 ea
Line Total: USD 2533.6476

0 - Global Stock
MOQ: 11  Multiples: 11
Pack Size: 11
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 11
Multiples : 11
11 : USD 230.3316

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Transistor Polarity
Operating Frequency
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Packaging
Configuration
Output Power
Brand
Gain
Product Type
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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MAPRST1214-6UF Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Collector-Emitter Voltage V 65 V CES Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 1.9 A C Power Dissipation +25C P 100 W TOT Storage Temperature T -65 to +200 C STG Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 10mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40V I - 3.0 mA CE CES Thermal Resistance Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz R - 1.8 C/W TH(JC) Output Power Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz P 6 - W OUT Power Gain Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz G 8.75 - dB P Gain Flatness Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz G - 0.75 dB Collector Efficiency Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz 40 - % C Input Return Loss Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz RL - -10 dB Pulse Droop Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz Droop - 0.3 dB Load Mismatch Tolerance Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MAPRST1214-6UF Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Released, 30 May 07 Typical RF Performance Freq. Pin Pout Gain Ic Eff Droop RL VSWR-S VSWR-T (GHz) (W) (W) (dB) (A) (%) (dB) (dB) (1.5:1) (3:1) 1.2 0.8 7.3 9.59 0.44 45.7 0.10 -14.1 S P 1.3 0.8 7.2 9.56 0.43 46.6 0.09 -15.2 S P S P 1.4 0.8 6.7 9.26 0.42 44.8 0.08 -16.1 Gain vs. Frequency Collector Efficiency vs. Frequency 10.0 55 9.5 50 9.0 45 8.5 40 8.0 35 1.20 1.25 1.30 1.35 1.40 1.20 1.25 1.30 1.35 1.40 Freq (GHz) Freq (GHz) RF Test Fixture Impedance F (GHz) Z ( ) Z ( ) IF OF 1.2 3.7 j 3.2 16.9 + j18.0 1.3 3.8 j 3.4 14.2 + j16.4 1.4 3.4 j 3.7 11.7 + j18.2 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Gain (dB) Efficiency (%)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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