Product Information

CPDT-24V

CPDT-24V electronic component of Comchip

Datasheet
ESD Suppressors / TVS Diodes ESD BIDIRECTIONAL 2CH 24V

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4278 ea
Line Total: USD 0.4278

13426 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13426 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

CPDT-24V
Comchip

1 : USD 0.4278
10 : USD 0.3668
100 : USD 0.2587
500 : USD 0.207
1000 : USD 0.1736
3000 : USD 0.1506
9000 : USD 0.1495
24000 : USD 0.1472
45000 : USD 0.1438

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Operating Temperature Range
Power Dissipation Pd
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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SMD ESD Protection Diode CPDT-24V RoHS Device Features SOT-23 -Common anode ESD protection. -IEC61000-4-2 Level 4 ESD protection. 0.119(3.00) 0.110(2.80) -Surface mount package. 3 -High component density. 0.056(1.40) 0.047(1.20) 1 2 Mechanical data 0.079(2.00) 0.071(1.80) -Case: SOT-23 Standard package, molded plastic. 0.006(0.15) -Terminals: Tin plated, solderable per 0.003(0.08) MIL-STD-750, method 2026. 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) -Marking code:E24 -Mounting position: Any. 0.004(0.10) 0.000(0.00) 0.020(0.50) -Weight: 0.0078 gram(approx.). 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Rating and Electrical Characteristics (at TA=25C unless otherwise noted) Typ Symbol Min Max Unit Parameter Conditions Diode breakdown voltage IR = 1mA VBD 25 28 V Leakage current VR = 24V IL 0.1 2.0 uA Junction capacitance VR =0V,f =1MHz CT 10 pF IEC 61000-4-2(air) 16 ESD capability ESD kV IEC 61000-4-2(contact) 8 Clamping voltage IPP = 1A,TP=8/20us VC 47 V Peak pulse power TP=8/20us PPP 47 W O Operation temperature Tj 125 C O Storage temperature TSTG -55 150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BP024 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDT-24V) Fig. 1 - 8/20us Peak pulse current Fig. 2 - Reverse characteristics wave form acc. IEC 61000-4-5 120% 10u Test Waveform parameters tf=8us Ta=25C Peak Valur Ipp td=20us 100% -t 80% 1u e 60% 40% 100n td= t Ipp /2 20% 10n 0% 0 20 40 60 80 100 0 5 10 15 20 25 30 Reverse voltage (%) Time, (us) Fig.3 - Capacitance between Fig.4 - Power rating derating curve terminals characteristics 120 15 Mounting on glass epoxy PCBs 100 12 80 9 60 6 40 3 20 0 0 0 25 50 75 100 125 150 0 10 20 30 40 Reverse voltage, (V) Ambient temperature, ( C ) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BP024 Page 2 Comchip Technology CO., LTD. Percentage of Ipp Capacitance between terminals, (PF) Power rating, (%) Reverse current, ( A )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

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